Nom du produit:acetic acid;4-ethenylbenzene-1,2-diol

IUPAC Name:4-ethenylbenzene-1,2-diol; bis(acetic acid)

CAS:57142-64-0
Formule moléculaire:C12H16O6
Pureté:95%+
Numéro de catalogue:CM482815
Poids moléculaire:256.25

Unité d'emballage Stock disponible Prix($) Quantité
CM482815-1000g 3-4 Weeks ŵũƿǶ

Pour une utilisation en R&D uniquement..

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Détails du produit

N° CAS:57142-64-0
Formule moléculaire:C12H16O6
Point de fusion:-
Code SMILES:CC(O)=O.CC(O)=O.OC1=C(O)C=C(C=C)C=C1
Densité:
Numéro de catalogue:CM482815
Poids moléculaire:256.25
Point d'ébullition:
N° Mdl:
Stockage:

Category Infos

Benzenes
Benzene is an important organic compound with the chemical formula C6H6, and its molecule consists of a ring of 6 carbon atoms, each with 1 hydrogen atom. Benzene is a sweet, flammable, colorless and transparent liquid with carcinogenic toxicity at room temperature, and has a strong aromatic odor. It is insoluble in water, easily soluble in organic solvents, and can also be used as an organic solvent itself. The ring system of benzene is called benzene ring, and the structure after removing one hydrogen atom from the benzene ring is called phenyl. Benzene is one of the most important basic organic chemical raw materials. Many important chemical intermediates can be derived from benzene through substitution reaction, addition reaction and benzene ring cleavage reaction.
Photoresist
Semiconductors could be termed as the most extensively utilized substance in the modern century. Polycrystalline wafers are used to make semiconductors. A single 300-mm silicon wafer may create hundreds of chips. Photoresist coatings and materials are an essential part of their fabrication as they are the main constituents of the photolithography process during the fabrication of the semiconductors. Photoresist is a mixed liquid that is sensitive to light. Its components include: photoinitiators (including photosensitizers, photoacid generators), photoresist resins, monomers, solvents and other additives. The photoresist can transfer the required fine pattern from the photomask (mask) to the substrate to be processed through photochemical reaction and photolithography processes such as exposure and development.

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